![Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeOx/Al2O3 gate stack by ozone oxidation Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeOx/Al2O3 gate stack by ozone oxidation](http://www.jos.ac.cn/fileBDTXB/journal/article/bdtxb/2022/1/21050015-16_mini.jpg)
Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeOx/Al2O3 gate stack by ozone oxidation
![Medium-Temperature-Oxidized GeOx Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing | Nanoscale Research Letters | Full Text Medium-Temperature-Oxidized GeOx Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing | Nanoscale Research Letters | Full Text](https://media.springernature.com/lw685/springer-static/image/art%3A10.1186%2Fs11671-022-03701-8/MediaObjects/11671_2022_3701_Fig2_HTML.png)
Medium-Temperature-Oxidized GeOx Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing | Nanoscale Research Letters | Full Text
![Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeOx/Al2O3 gate stack by ozone oxidation Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeOx/Al2O3 gate stack by ozone oxidation](http://www.jos.ac.cn/fileBDTXB/journal/article/bdtxb/2022/1/21050015-11.jpg)
Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeOx/Al2O3 gate stack by ozone oxidation
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